HiPerFET TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
IXFH 52N30Q
IXFK 52N30Q
IXFT 52N30Q
V DSS
I D25
R DS(on)
t rr
= 300 V
= 52 A
= 60 m W
£ 250 ns
Avalanche Rated, High dv/dt, Low t rr
Low Gate Charge and Capacitances
Preliminary data
Symbol
Test Conditions
Maximum Ratings
TO-247 AD (IXFH)
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M W
300
300
V
V
V GS
V GSM
I D25
I DM
I AR
E AR
E AS
Continuous
Transient
T C = 25 ° C, Chip capability
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
± 20
± 30
52
208
52
30
1.5
V
V
A
A
A
mJ
J
TO-268 (D3) ( IXFT)
(TAB)
dv/dt
I S £ I DM , di/dt £ 100 A/ m s, V DD £ V DSS ,
T J £ 150 ° C, R G = 2 W
5
V/ns
G
S
(TAB)
P D
T C = 25 ° C
360
W
T J
T JM
T stg
-55 ... +150
150
-55 ... +150
° C
° C
° C
TO-264 AA (IXFK)
T L
1.6 mm (0.063 in) from case for 10 s
300
° C
M d
Weight
Mounting torque
TO-247
TO-264
TO-247
TO-264
1.13/10 Nm/lb.in.
0.9/6 Nm/lb.in.
6
g
10
g
G = Gate
S = Source
G
D
S
TAB = Drain
D (TAB)
TO-268
4
g
Features
? Low gate charge
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ.
max.
? International standard packages
? Epoxy meet UL 94 V-0, flammability
classification
V DSS
V GS = 0 V, I D = 1 mA
300
V
? Low R DS (on) HDMOS TM process
? Rugged polysilicon gate cell structure
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 4 mA
V GS = ± 20 V DC , V DS = 0
V DS = V DSS
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
2
4
± 200
50
1
V
nA
m A
mA
? Avalanche energy and current rated
? Fast intrinsic Rectifier
Advantages
R DS(on)
V GS = 10 V, I D = 0.5 ? I D25
Pulse test, t £ 300 m s, duty cycle d £ 2 %
60 m W
? Easy to mount
? Space savings
? High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
? 2000 IXYS All rights reserved
98522B (7/00)
1-2
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